DTA123EET1G ON Semiconductor
auf Bestellung 101481 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9494+ | 0.046 EUR |
| 10601+ | 0.039 EUR |
| 100000+ | 0.032 EUR |
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Technische Details DTA123EET1G ON Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.
Weitere Produktangebote DTA123EET1G nach Preis ab 0.039 EUR bis 0.33 EUR
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DTA123EET1G | Hersteller : ON Semiconductor |
 Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123EET1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EET1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT PNP |
auf Bestellung 679 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123EET1G | Hersteller : onsemi |
Description: TRANS PREBIAS PNP 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTA123EET1G | Hersteller : ONSEMI |
Description: ONSEMI - DTA123EET1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 202443 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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DTA123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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| DTA123EET1G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Current gain: 8...15 Quantity in set/package: 3000pcs. |
Produkt ist nicht verfügbar |