DTA123JCAHZGT116 ROHM Semiconductor
Hersteller: ROHM Semiconductor
Digital Transistors PNP, SOT-23, R1R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor)
| Anzahl | Preis |
|---|---|
| 6+ | 0.55 EUR |
| 10+ | 0.37 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.15 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.11 EUR |
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Technische Details DTA123JCAHZGT116 ROHM Semiconductor
Description: TRANS PREBIAS PNP 50V 0.1A SST3, Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SST3, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTA123JCAHZGT116 nach Preis ab 0.11 EUR bis 0.58 EUR
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DTA123JCAHZGT116 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 50V 0.1A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: SST3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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