DTA123JMT2L Rohm Semiconductor
auf Bestellung 5700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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4406+ | 0.035 EUR |
4525+ | 0.033 EUR |
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Technische Details DTA123JMT2L Rohm Semiconductor
Description: TRANS PREBIAS PNP 150MW VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Supplier Device Package: VMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 47 kOhms.
Weitere Produktangebote DTA123JMT2L nach Preis ab 0.061 EUR bis 0.85 EUR
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DTA123JMT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Case: SOT723 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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DTA123JMT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Case: SOT723 Mounting: SMD Kind of package: reel; tape Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Polarisation: bipolar Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JMT2L | Hersteller : Rohm Semiconductor | Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R |
auf Bestellung 2561 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JMT2L | Hersteller : Rohm Semiconductor | Trans Digital BJT PNP 50V 100mA 3-Pin VMT T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTA123JMT2L | Hersteller : ROHM Semiconductor | Bipolar Transistors - Pre-Biased PNP 50V 100MA |
auf Bestellung 6003 Stücke: Lieferzeit 14-28 Tag (e) |
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DTA123JMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW VMT3 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA123JMT2L | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 150MW VMT3 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: VMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms |
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