DTA124EUA Yangjie Technology

Description: Transistors - Bipolar (BJT) - Si, Resistor - Base (R1): 22 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SOT-323, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: PNP - Pre-Biased + Diode, Packaging: Tape & Reel (TR), Resistor - Emitter Base (R2): 22 kOhms, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323.