DTB113ECHZGT116 ROHM SEMICONDUCTOR
Hersteller: ROHM SEMICONDUCTORCategory: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 1kΩ
Base-emitter resistor: 1kΩ
Power dissipation: 0.2W
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1709 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 625+ | 0.11 EUR |
| 962+ | 0.074 EUR |
| 1309+ | 0.055 EUR |
| 1709+ | 0.041 EUR |
| 6000+ | 0.038 EUR |
| 9000+ | 0.037 EUR |
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Produktbewertung abgeben
Technische Details DTB113ECHZGT116 ROHM SEMICONDUCTOR
Description: DTB113ECHZG IS THE HIGH RELIABIL, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V, Supplier Device Package: SST3, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Weitere Produktangebote DTB113ECHZGT116 nach Preis ab 0.041 EUR bis 0.72 EUR
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DTB113ECHZGT116 | Hersteller : ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Power dissipation: 0.2W Frequency: 200MHz |
auf Bestellung 1709 Stücke: Lieferzeit 14-21 Tag (e) |
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DTB113ECHZGT116 | Hersteller : ROHM Semiconductor |
Digital Transistors PNP, SOT-23, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor) |
auf Bestellung 8049 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB113ECHZGT116 | Hersteller : Rohm Semiconductor |
Description: DTB113ECHZG IS THE HIGH RELIABIL Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB113ECHZGT116 | Hersteller : Rohm Semiconductor |
Trans Digital BJT PNP 50V 0.5A 200mW 3-Pin SST T/R Automotive AEC-Q101 |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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DTB113ECHZGT116 | Hersteller : Rohm Semiconductor |
Description: DTB113ECHZG IS THE HIGH RELIABIL Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
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