
DTB113ECT116 ROHM Semiconductor
auf Bestellung 2211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
7+ | 0.44 EUR |
11+ | 0.27 EUR |
100+ | 0.11 EUR |
1000+ | 0.097 EUR |
3000+ | 0.083 EUR |
9000+ | 0.067 EUR |
24000+ | 0.065 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTB113ECT116 ROHM Semiconductor
Description: TRANS PREBIAS PNP 50V 0.5A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V, Supplier Device Package: SST3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTB113ECT116 nach Preis ab 0.11 EUR bis 0.44 EUR
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DTB113ECT116 | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Resistors Included: R1 and R2 |
auf Bestellung 2374 Stücke: Lieferzeit 10-14 Tag (e) |
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DTB113ECT116 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Power dissipation: 0.2W Frequency: 200MHz Current gain: 33 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DTB113ECT116 | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
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![]() |
DTB113ECT116 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.5A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ Power dissipation: 0.2W Frequency: 200MHz Current gain: 33 |
Produkt ist nicht verfügbar |