DTB113ZSTP
Hersteller: DTB113ZSTP Транзисторы Digital
auf Bestellung 4719 Stücke:
Lieferzeit 7-21 Tag (e)
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Technische Details DTB113ZSTP
Description: TRANS PREBIAS PNP 300MW SPT, Packaging: Tape & Box (TB), Package / Case: SC-72 Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SPT, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 300 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTB113ZSTP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DTB113ZSTP | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS PNP 300MW SPT Packaging: Tape & Box (TB) Package / Case: SC-72 Formed Leads Mounting Type: Through Hole Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SPT Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 300 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 10 kOhms |
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