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DTC015TMT2L

DTC015TMT2L ROHM Semiconductor

datasheet?p=DTC015TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
Digital Transistors NPN Digital Transtr w/built in resistors
auf Bestellung 6970 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
90+0.58 EUR
131+ 0.4 EUR
207+ 0.25 EUR
1000+ 0.11 EUR
2500+ 0.099 EUR
8000+ 0.073 EUR
24000+ 0.07 EUR
Mindestbestellmenge: 90
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Technische Details DTC015TMT2L ROHM Semiconductor

Description: TRANS PREBIAS NPN 50V VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V, Supplier Device Package: VMT3, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 150 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 100 kOhms.

Weitere Produktangebote DTC015TMT2L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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DTC015TMT2L DTC015TMT2L Hersteller : Rohm Semiconductor datasheet?p=DTC015TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V VMT3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar
DTC015TMT2L DTC015TMT2L Hersteller : Rohm Semiconductor datasheet?p=DTC015TM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 10V
Supplier Device Package: VMT3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 100 kOhms
Produkt ist nicht verfügbar