DTC113EET1G ON Semiconductor
auf Bestellung 261000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 20000+ | 0.027 EUR |
| 100000+ | 0.022 EUR |
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Technische Details DTC113EET1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTC113EET1G nach Preis ab 0.029 EUR bis 0.25 EUR
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DTC113EET1G | Hersteller : onsemi |
 Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Resistors Included: R1 and R2 |
auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC113EET1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms Resistors Included: R1 and R2 |
auf Bestellung 108758 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC113EET1G | Hersteller : onsemi |
Digital Transistors NPN DIGITAL TRANSISTOR |
auf Bestellung 2538 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC113EET1G | Hersteller : ON Semiconductor |
Bipolar Transistors - Pre-Biased NPN DIGITAL TRANSISTOR |
auf Bestellung 3806 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC113EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
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DTC113EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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| DTC113EET1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC75; SOT416 Current gain: 3...5 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Base resistor: 1kΩ Base-emitter resistor: 1kΩ |
Produkt ist nicht verfügbar |