DTC114EBT2L Rohm Semiconductor

Description: TRANS PREBIAS NPN 50V 0.1A VMN3, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: VMN3, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SOT-923F, Packaging: Tape & Reel (TR).