DTC114YUAT106 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 70 mA
Part Status: Not For New Designs
Supplier Device Package: UMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.074 EUR |
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Technische Details DTC114YUAT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 70 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC114YUAT106 nach Preis ab 0.039 EUR bis 0.37 EUR
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DTC114YUAT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin UMT T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114YUAT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R |
auf Bestellung 17147 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114YUAT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin UMT T/R |
auf Bestellung 16741 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC114YUAT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 70 mA Part Status: Not For New Designs Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 5975 Stücke: Lieferzeit 10-14 Tag (e) |
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