DTC115EU3T106 Rohm Semiconductor
auf Bestellung 1890 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1397+ | 0.11 EUR |
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Technische Details DTC115EU3T106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V, Supplier Device Package: UMT3, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.
Weitere Produktangebote DTC115EU3T106 nach Preis ab 0.039 EUR bis 0.33 EUR
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DTC115EU3T106 | Hersteller : ROHM Semiconductor |
 Bipolar Transistors - Pre-Biased NPN 50 VCEO 0.1A SOT-323 |
auf Bestellung 5236 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC115EU3T106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC115EU3T106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 5mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
Produkt ist nicht verfügbar |