DTC123EU3HZGT106 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin UMT T/R Automotive AEC-Q101
| Anzahl | Preis |
|---|---|
| 1902+ | 0.077 EUR |
| 2500+ | 0.074 EUR |
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Technische Details DTC123EU3HZGT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A UMT3, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 2.2 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V.
Weitere Produktangebote DTC123EU3HZGT106 nach Preis ab 0.09 EUR bis 0.49 EUR
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DTC123EU3HZGT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin UMT T/R Automotive AEC-Q101 |
auf Bestellung 3005 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EU3HZGT106 | Hersteller : ROHM Semiconductor |
Digital Transistors PNP 50V 0.1A 2.2kO SOT-323 |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123EU3HZGT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 387 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123EU3HZGT106 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 0.1A 200mW 3-Pin UMT T/R Automotive AEC-Q101 |
auf Bestellung 109 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EU3HZGT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.1A UMT3 Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 2.2 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V |
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