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DTC123YUAT106

DTC123YUAT106 Rohm Semiconductor

dtc123yetl-e.pdf Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 50V 100mA 200mW 3-Pin UMT T/R
auf Bestellung 134820 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2891+0.054 EUR
2899+ 0.052 EUR
3402+ 0.043 EUR
3572+ 0.039 EUR
6000+ 0.035 EUR
12000+ 0.033 EUR
24000+ 0.03 EUR
Mindestbestellmenge: 2891
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Technische Details DTC123YUAT106 Rohm Semiconductor

Description: TRANS PREBIAS NPN 200MW UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V, Supplier Device Package: UMT3, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 250 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 10 kOhms.

Weitere Produktangebote DTC123YUAT106 nach Preis ab 0.13 EUR bis 0.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DTC123YUAT106 DTC123YUAT106 Hersteller : Rohm Semiconductor datasheet?p=DTC123YUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
39+0.46 EUR
48+ 0.37 EUR
Mindestbestellmenge: 39
DTC123YUAT106 DTC123YUAT106 Hersteller : ROHM Semiconductor ROHM_S_A0008988648_1-2562783.pdf Bipolar Transistors - Pre-Biased NPN 50V 100MA SOT-323
auf Bestellung 3613 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+0.48 EUR
10+ 0.38 EUR
100+ 0.2 EUR
500+ 0.13 EUR
Mindestbestellmenge: 6
DTC123YUAT106 DTC123YUAT106 Hersteller : Rohm Semiconductor datasheet?p=DTC123YUA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 200MW UMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
Supplier Device Package: UMT3
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 10 kOhms
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