DTC123YUAT106 Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 1544+ | 0.15 EUR |
| 2618+ | 0.054 EUR |
| 3000+ | 0.053 EUR |
| 6000+ | 0.044 EUR |
| 24000+ | 0.043 EUR |
| 96000+ | 0.037 EUR |
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Technische Details DTC123YUAT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 250 MHz, Power - Max: 200 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Not For New Designs, Supplier Device Package: UMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTC123YUAT106 nach Preis ab 0.37 EUR bis 0.46 EUR
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DTC123YUAT106 | Hersteller : Rohm Semiconductor |
 Description: TRANS PREBIAS NPN 200MW UMT3Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Not For New Designs Supplier Device Package: UMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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