DTC124EET1G ONSEMI
Hersteller: ONSEMICategory: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 4425 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1450+ | 0.05 EUR |
| 1600+ | 0.045 EUR |
| 2100+ | 0.034 EUR |
| 2200+ | 0.033 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTC124EET1G ONSEMI
Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms.
Weitere Produktangebote DTC124EET1G nach Preis ab 0.022 EUR bis 0.48 EUR
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DTC124EET1G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Anzahl je Verpackung: 25 Stücke |
auf Bestellung 4425 Stücke: Lieferzeit 7-14 Tag (e) |
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DTC124EET1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC124EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
auf Bestellung 1751 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC124EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
auf Bestellung 1751 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC124EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC124EET1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms |
auf Bestellung 31842 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC124EET1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 11705 Stücke: Lieferzeit 14-28 Tag (e) |
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DTC124EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC124EET1G | Hersteller : ON-Semicoductor |
Trans Digital BJT NPN 50V 100mA 300mW Automotive 3-Pin SOT-416 T/R DTC124EET1G TDTC124ee Anzahl je Verpackung: 500 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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| DTC124EET1G | Hersteller : Rohm Semiconductor |
Транз. Бипол. (со встроенными резисторами 22k) ММ NPN EMT3 Uceo=50V; Ic=0,1A; Pdmax=0,5W; hfemin=30 |
auf Bestellung 4448 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC124EET1G | Hersteller : ONSEMI |
Description: ONSEMI - DTC124EET1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 267316 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC124EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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DTC124EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
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DTC124EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |