DTC124EM3T5G ON Semiconductor
auf Bestellung 320000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 9678+ | 0.055 EUR |
| 10831+ | 0.048 EUR |
| 100000+ | 0.038 EUR |
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Technische Details DTC124EM3T5G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V, Supplier Device Package: SOT-723, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 260 mW, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTC124EM3T5G nach Preis ab 0.055 EUR bis 0.37 EUR
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DTC124EM3T5G | Hersteller : onsemi |
 Description: TRANS PREBIAS NPN 50V SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC124EM3T5G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 7132 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC124EM3T5G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Resistors Included: R1 and R2 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC124EM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R |
auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DTC124EM3T5G | Hersteller : ONSEMI |
Description: ONSEMI - DTC124EM3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 336000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC124EM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 600mW 3-Pin SOT-723 T/R |
Produkt ist nicht verfügbar |
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| DTC124EM3T5G | Hersteller : ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ Current gain: 60...100 Quantity in set/package: 8000pcs. |
Produkt ist nicht verfügbar |