DTC614TUT106 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS NPN 200MW UMT3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: UMT3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 10 kOhms
auf Bestellung 299 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.37 EUR |
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Technische Details DTC614TUT106 Rohm Semiconductor
Description: TRANS PREBIAS NPN 200MW UMT3, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V, Supplier Device Package: UMT3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 20 V, Power - Max: 200 mW, Frequency - Transition: 150 MHz, Resistor - Base (R1): 10 kOhms.
Weitere Produktangebote DTC614TUT106 nach Preis ab 0.15 EUR bis 0.82 EUR
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DTC614TUT106 | Hersteller : ROHM Semiconductor |
Digital Transistors TRANSISTOR DIGITAL SMT; NPN; 20V; 600mA |
auf Bestellung 2742 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC614TUT106 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 200MW UMT3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Supplier Device Package: UMT3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 10 kOhms |
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