DTD113ECT116 Rohm Semiconductor
auf Bestellung 2628 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 690+ | 0.22 EUR |
| 1000+ | 0.20 EUR |
| 2500+ | 0.19 EUR |
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Technische Details DTD113ECT116 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V, Supplier Device Package: SST3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 1 kOhms, Resistor - Emitter Base (R2): 1 kOhms.
Weitere Produktangebote DTD113ECT116 nach Preis ab 0.07 EUR bis 0.59 EUR
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DTD113ECT116 | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD113ECT116 | Hersteller : ROHM Semiconductor |
Digital Transistors NPN 500mA/50V w/bias resistors |
auf Bestellung 1402 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD113ECT116 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD113ECT116 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD113ECT116 | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Mounting: SMD Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DTD113ECT116 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 1 kOhms Resistor - Emitter Base (R2): 1 kOhms |
Produkt ist nicht verfügbar |
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DTD113ECT116 | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 1kΩ Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 1kΩ Mounting: SMD Case: SOT23 Frequency: 200MHz Collector-emitter voltage: 50V Current gain: 33 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W |
Produkt ist nicht verfügbar |