DTD114GCT116 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Emitter Base (R2): 10 kOhms
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.10 EUR |
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Technische Details DTD114GCT116 Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V, Supplier Device Package: SST3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Emitter Base (R2): 10 kOhms.
Weitere Produktangebote DTD114GCT116 nach Preis ab 0.06 EUR bis 0.60 EUR
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DTD114GCT116 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD114GCT116 | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 50V 500mA 200mW 3-Pin SOT-23 T/R |
auf Bestellung 1964 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD114GCT116 | Hersteller : ROHM Semiconductor |
Digital Transistors NPN 500mA/50V w/bias resistors |
auf Bestellung 3793 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD114GCT116 | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V 0.5A SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V Supplier Device Package: SST3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Emitter Base (R2): 10 kOhms |
auf Bestellung 3080 Stücke: Lieferzeit 10-14 Tag (e) |
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