Produkte > ROHM SEMICONDUCTOR > DTD123ECT116
DTD123ECT116

DTD123ECT116 Rohm Semiconductor


datasheet?p=DTD123EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.097 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DTD123ECT116 Rohm Semiconductor

Description: TRANS PREBIAS NPN 50V 0.5A SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V, Supplier Device Package: SST3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Frequency - Transition: 200 MHz, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms.

Weitere Produktangebote DTD123ECT116 nach Preis ab 0.14 EUR bis 0.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DTD123ECT116 DTD123ECT116 Hersteller : Rohm Semiconductor datasheet?p=DTD123EC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 50V 0.5A SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 39 @ 50mA, 5V
Supplier Device Package: SST3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
auf Bestellung 6785 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
31+0.58 EUR
45+ 0.5 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 31
DTD123ECT116 DTD123ECT116 Hersteller : ROHM Semiconductor dtd123ect116-e-1872648.pdf Bipolar Transistors - Pre-Biased NPN 500mA/50V w/bias resistors
auf Bestellung 3000 Stücke:
Lieferzeit 259-273 Tag (e)
Anzahl Preis ohne MwSt
53+0.99 EUR
65+ 0.8 EUR
122+ 0.43 EUR
500+ 0.28 EUR
Mindestbestellmenge: 53