Produkte > ROHM SEMICONDUCTOR > DTD543EE3TL
DTD543EE3TL

DTD543EE3TL Rohm Semiconductor

datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
auf Bestellung 2954 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.41 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 28
Produktrezensionen
Produktbewertung abgeben

Technische Details DTD543EE3TL Rohm Semiconductor

Description: TRANS PREBIAS NPN 12V 0.5A EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased + Diode, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V, Supplier Device Package: EMT3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 150 mW, Frequency - Transition: 260 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms.

Weitere Produktangebote DTD543EE3TL nach Preis ab 0.22 EUR bis 0.94 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DTD543EE3TL DTD543EE3TL Hersteller : ROHM Semiconductor datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Digital Transistors NPN, SOT-416, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor)
auf Bestellung 6000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.94 EUR
68+ 0.77 EUR
100+ 0.53 EUR
1000+ 0.3 EUR
3000+ 0.26 EUR
9000+ 0.24 EUR
24000+ 0.22 EUR
Mindestbestellmenge: 56
DTD543EE3TL DTD543EE3TL Hersteller : Rohm Semiconductor datasheet?p=DTD543EE3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 115 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Produkt ist nicht verfügbar