DTD543ZE3TL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS PREBIAS NPN 12V 0.5A EMT3
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased + Diode
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Supplier Device Package: EMT3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 150 mW
Frequency - Transition: 260 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
Resistors Included: R1 and R2
auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 41+ | 0.44 EUR |
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Technische Details DTD543ZE3TL Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased + Diode, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Supplier Device Package: EMT3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 150 mW, Frequency - Transition: 260 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 4.7 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTD543ZE3TL nach Preis ab 0.15 EUR bis 0.74 EUR
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DTD543ZE3TL | Hersteller : ROHM Semiconductor |
Digital Transistors NPN, SOT-416, R1?R2 Leak Absorption Type Digital Transistor (Bias Resistor Built-in Transistor) |
auf Bestellung 6388 Stücke: Lieferzeit 10-14 Tag (e) |
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DTD543ZE3TL | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN 12V 0.5A 150mW 3-Pin EMT T/R |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD543ZE3TL | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased + Diode Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: EMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 4.7 kOhms Resistors Included: R1 and R2 |
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