DTD543ZETL Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
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Technische Details DTD543ZETL Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 260 MHz, Power - Max: 150 mW, Voltage - Collector Emitter Breakdown (Max): 12 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: EMT3, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-75, SOT-416, Packaging: Tape & Reel (TR).
Weitere Produktangebote DTD543ZETL nach Preis ab 0.23 EUR bis 0.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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DTD543ZETL | Rohm Semiconductor |
Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R |
auf Bestellung 1740 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD543ZETL | Rohm Semiconductor |
Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R |
auf Bestellung 3857 Stücke: Lieferzeit 14-21 Tag (e) |
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DTD543ZETL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 12V 0.5A EMT3 Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 4.7 kOhms Frequency - Transition: 260 MHz Power - Max: 150 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: EMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTD543ZETL | ROHM Semiconductor |
Bipolar Transistors - Pre-Biased TRANSISTOR |
auf Bestellung 2966 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DTD543ZETL |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R
Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R
auf Bestellung 1740 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 632+ | 0.27 EUR |
| 656+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| DTD543ZETL |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R
Trans Digital BJT NPN 12V 500mA 3-Pin EMT T/R
auf Bestellung 3857 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 542+ | 0.48 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.29 EUR |
| 3000+ | 0.26 EUR |
| DTD543ZETL |
|
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 12V 0.5A EMT3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 260 MHz
Power - Max: 150 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: EMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| DTD543ZETL |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased TRANSISTOR
Bipolar Transistors - Pre-Biased TRANSISTOR
auf Bestellung 2966 Stücke:
Lieferzeit 10-14 Tag (e)