
DTD543ZMT2L Rohm Semiconductor
auf Bestellung 7964 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
1051+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTD543ZMT2L Rohm Semiconductor
Description: TRANS PREBIAS NPN 12V 0.5A VMT3, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V, Supplier Device Package: VMT3, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 150 mW, Frequency - Transition: 260 MHz, Resistor - Base (R1): 4.7 kOhms, Resistor - Emitter Base (R2): 47 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTD543ZMT2L nach Preis ab 0.14 EUR bis 0.65 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
DTD543ZMT2L | Hersteller : Rohm Semiconductor |
![]() |
auf Bestellung 2893 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
![]() |
DTD543ZMT2L | Hersteller : ROHM Semiconductor |
![]() |
auf Bestellung 6993 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
DTD543ZMT2L | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT723 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||
![]() |
DTD543ZMT2L | Hersteller : Rohm Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 2V Supplier Device Package: VMT3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 150 mW Frequency - Transition: 260 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
|||||||||||||||
DTD543ZMT2L | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 12V; 0.5A; 150mW; SOT723; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 12V Collector current: 0.5A Power dissipation: 0.15W Case: SOT723 Current gain: 140 Mounting: SMD Kind of package: reel; tape Frequency: 260MHz Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |