
DTDG14GPT100 Rohm Semiconductor

Description: TRANS PREBIAS NPN 60V 1A MPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: MPT3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Frequency - Transition: 80 MHz
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R2 Only
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1000+ | 0.38 EUR |
2000+ | 0.34 EUR |
3000+ | 0.33 EUR |
5000+ | 0.31 EUR |
7000+ | 0.30 EUR |
10000+ | 0.28 EUR |
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Technische Details DTDG14GPT100 Rohm Semiconductor
Description: TRANS PREBIAS NPN 60V 1A MPT3, Packaging: Tape & Reel (TR), Package / Case: TO-243AA, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V, Supplier Device Package: MPT3, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W, Frequency - Transition: 80 MHz, Resistor - Emitter Base (R2): 10 kOhms, Resistors Included: R2 Only.
Weitere Produktangebote DTDG14GPT100 nach Preis ab 0.29 EUR bis 1.36 EUR
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DTDG14GPT100 | Hersteller : ROHM Semiconductor |
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auf Bestellung 1372 Stücke: Lieferzeit 10-14 Tag (e) |
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DTDG14GPT100 | Hersteller : Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 500mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: MPT3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W Frequency - Transition: 80 MHz Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R2 Only |
auf Bestellung 10862 Stücke: Lieferzeit 10-14 Tag (e) |
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DTDG14GPT100 | Hersteller : ROHM |
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auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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DTDG14GPT100 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base-emitter resistor: 10kΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DTDG14GPT100 | Hersteller : ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 60V; 1A; 500mW; SC62,SOT89; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 60V Collector current: 1A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 300 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz Base-emitter resistor: 10kΩ |
Produkt ist nicht verfügbar |