DXT13003DG-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 450V 1.3A SOT-223-3
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1.3 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 700 mW
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Technische Details DXT13003DG-13 Diodes Incorporated
Description: TRANS NPN 450V 1.3A SOT-223-3, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A, DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V, Frequency - Transition: 4MHz, Supplier Device Package: SOT-223-3, Current - Collector (Ic) (Max): 1.3 A, Voltage - Collector Emitter Breakdown (Max): 450 V, Power - Max: 700 mW.
Weitere Produktangebote DXT13003DG-13 nach Preis ab 0.31 EUR bis 1.53 EUR
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DXT13003DG-13 | Diodes Incorporated |
Description: TRANS NPN 450V 1.3A SOT-223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V Frequency - Transition: 4MHz Supplier Device Package: SOT-223-3 Current - Collector (Ic) (Max): 1.3 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 700 mW |
auf Bestellung 6282 Stücke: Lieferzeit 10-14 Tag (e) |
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DXT13003DG-13 | Diodes Incorporated |
Bipolar Transistors - BJT 100V NPN 450V Trans 1.3A 3W 4MHz 400mV |
auf Bestellung 2489 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DXT13003DG-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 450V 1.3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1.3 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 700 mW
Description: TRANS NPN 450V 1.3A SOT-223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: SOT-223-3
Current - Collector (Ic) (Max): 1.3 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 700 mW
auf Bestellung 6282 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.11 EUR |
| 26+ | 0.69 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.31 EUR |
| DXT13003DG-13 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 100V NPN 450V Trans 1.3A 3W 4MHz 400mV
Bipolar Transistors - BJT 100V NPN 450V Trans 1.3A 3W 4MHz 400mV
auf Bestellung 2489 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.53 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.43 EUR |
| 2500+ | 0.35 EUR |