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DXT13003EK-13

DXT13003EK-13 Diodes Incorporated


DXT13003EK.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 100V NPN 460V Trans 1.5A 3W 4MHz 400mV
auf Bestellung 6298 Stücke:

Lieferzeit 10-14 Tag (e)
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3+1.18 EUR
10+ 1.01 EUR
100+ 0.75 EUR
500+ 0.59 EUR
Mindestbestellmenge: 3
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Technische Details DXT13003EK-13 Diodes Incorporated

Description: TRANS NPN 460V 1.5A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A, DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 2V, Frequency - Transition: 4MHz, Supplier Device Package: TO-252-3, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 460 V, Power - Max: 1.6 W.

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DXT13003EK-13 DXT13003EK-13 Hersteller : Diodes Inc dxt13003ek.pdf Trans GP BJT NPN 460V 1.5A 3900mW 3-Pin(2+Tab) DPAK T/R
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DXT13003EK-13 DXT13003EK-13 Hersteller : Diodes Incorporated DXT13003EK.pdf Description: TRANS NPN 460V 1.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 300mA, 2V
Frequency - Transition: 4MHz
Supplier Device Package: TO-252-3
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 460 V
Power - Max: 1.6 W
Produkt ist nicht verfügbar