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DXTN10060DFJBWQ-7

DXTN10060DFJBWQ-7 Diodes Incorporated


DXTN10060DFJBWQ.pdf Hersteller: Diodes Incorporated
Description: TRANS NPN 60V 4A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.25 EUR
Mindestbestellmenge: 3000
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Technische Details DXTN10060DFJBWQ-7 Diodes Incorporated

Description: TRANS NPN 60V 4A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V, Frequency - Transition: 125MHz, Supplier Device Package: W-DFN2020-3 (Type A), Part Status: Active, Current - Collector (Ic) (Max): 4 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 1.8 W.

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DXTN10060DFJBWQ-7 DXTN10060DFJBWQ-7 Hersteller : Diodes Incorporated DIOD_S_A0009600098_1-2543327.pdf Bipolar Transistors - BJT SS Low Sat Transist
auf Bestellung 2441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.73 EUR
10+ 0.63 EUR
100+ 0.44 EUR
500+ 0.34 EUR
1000+ 0.28 EUR
3000+ 0.25 EUR
Mindestbestellmenge: 4
DXTN10060DFJBWQ-7 DXTN10060DFJBWQ-7 Hersteller : Diodes Incorporated DXTN10060DFJBWQ.pdf Description: TRANS NPN 60V 4A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 340 @ 200mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: W-DFN2020-3 (Type A)
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 11445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.76 EUR
27+ 0.65 EUR
100+ 0.49 EUR
500+ 0.38 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 24