DXTP3C100PDQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: SS Low Sat Transistor PowerDI506
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PowerDI5060-8 (Type UXD)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A
Voltage - Collector Emitter Breakdown (Max): 100V
Current - Collector (Ic) (Max): 3A
Power - Max: 1.76W
Operating Temperature: -55°C ~ 175°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 16+ | 1.17 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.57 EUR |
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Technische Details DXTP3C100PDQ-13 Diodes Incorporated
Description: SS Low Sat Transistor PowerDI506, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PowerDI5060-8 (Type UXD), Frequency - Transition: 100MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 500mA, 10V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 325mV @ 200mA, 2A, Voltage - Collector Emitter Breakdown (Max): 100V, Current - Collector (Ic) (Max): 3A, Power - Max: 1.76W, Operating Temperature: -55°C ~ 175°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.

