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DXTP58100CFDB-7

DXTP58100CFDB-7 Diodes Incorporated

DIOD_S_A0011114891_1-2543508.pdf Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
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5+0.69 EUR
10+0.59 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.26 EUR
3000+0.20 EUR
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Technische Details DXTP58100CFDB-7 Diodes Incorporated

Description: TRANS PNP 100V 2A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V, Frequency - Transition: 135MHz, Supplier Device Package: U-DFN2020-3, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 690 mW.

Weitere Produktangebote DXTP58100CFDB-7 nach Preis ab 0.29 EUR bis 0.76 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DXTP58100CFDB-7 DXTP58100CFDB-7 Hersteller : Diodes Incorporated DXTP58100CFDB.pdf Description: TRANS PNP 100V 2A 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.65 EUR
100+0.48 EUR
500+0.38 EUR
1000+0.29 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DXTP58100CFDB-7 DXTP58100CFDB-7 Hersteller : Diodes Incorporated DXTP58100CFDB.pdf Description: TRANS PNP 100V 2A 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH