DXTP58100CFDB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 2A UDFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.33 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DXTP58100CFDB-7 Diodes Incorporated
Description: TRANS PNP 100V 2A UDFN2020-3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V, Frequency - Transition: 135MHz, Supplier Device Package: U-DFN2020-3, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 690 mW.
Weitere Produktangebote DXTP58100CFDB-7 nach Preis ab 0.33 EUR bis 1.71 EUR
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DXTP58100CFDB-7 | Diodes Incorporated |
Description: TRANS PNP 100V 2A UDFN2020-3 Packaging: Cut Tape (CT) Package / Case: 3-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Frequency - Transition: 135MHz Supplier Device Package: U-DFN2020-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 690 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DXTP58100CFDB-7 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K |
auf Bestellung 2009 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DXTP58100CFDB-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 100V 2A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
Description: TRANS PNP 100V 2A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 185mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: U-DFN2020-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 690 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 24+ | 0.9 EUR |
| 28+ | 0.75 EUR |
| 50+ | 0.65 EUR |
| 100+ | 0.58 EUR |
| DXTP58100CFDB-7 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
auf Bestellung 2009 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.71 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.58 EUR |
| 3000+ | 0.33 EUR |