DXTP5840CFDB-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 4.8A UDFN2020-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4.8 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 135MHz
| Anzahl | Preis |
|---|---|
| 17+ | 1.04 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.28 EUR |
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Technische Details DXTP5840CFDB-7 Diodes Incorporated
Description: TRANS PNP 40V 4.8A UDFN2020-3, Power - Max: 690 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 4.8 A, Supplier Device Package: U-DFN2020-3 (Type B), Frequency - Transition: 135MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-UDFN Exposed Pad, Packaging: Tape & Reel (TR).
Weitere Produktangebote DXTP5840CFDB-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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DXTP5840CFDB-7 | Diodes Incorporated |
Description: TRANS PNP 40V 4.8A UDFN2020-3 Power - Max: 690 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 4.8 A Supplier Device Package: U-DFN2020-3 (Type B) Frequency - Transition: 135MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: 3-UDFN Exposed Pad Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DXTP5840CFDB-7 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DXTP5840CFDB-7 |
|
Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 4.8A UDFN2020-3
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4.8 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: TRANS PNP 40V 4.8A UDFN2020-3
Power - Max: 690 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 4.8 A
Supplier Device Package: U-DFN2020-3 (Type B)
Frequency - Transition: 135MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DXTP5840CFDB-7 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH