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DXTP5840CFDB-7

DXTP5840CFDB-7 Diodes Incorporated

DXTP5840CFDB.pdf Hersteller: Diodes Incorporated
Description: TRANS PNP 40V 4.8A UDFN2020-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4.8 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 690 mW
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Technische Details DXTP5840CFDB-7 Diodes Incorporated

Description: TRANS PNP 40V 4.8A UDFN2020-3, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V, Frequency - Transition: 135MHz, Supplier Device Package: U-DFN2020-3 (Type B), Current - Collector (Ic) (Max): 4.8 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 690 mW.

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DXTP5840CFDB-7 DXTP5840CFDB-7 Hersteller : Diodes Incorporated DXTP5840CFDB.pdf Description: TRANS PNP 40V 4.8A UDFN2020-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 30mA, 3A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 10mA, 2V
Frequency - Transition: 135MHz
Supplier Device Package: U-DFN2020-3 (Type B)
Current - Collector (Ic) (Max): 4.8 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 690 mW
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DXTP5840CFDB-7 DXTP5840CFDB-7 Hersteller : Diodes Incorporated DIOD_S_A0011114910_1-2543527.pdf Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K
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