DZT5551Q-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-223-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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Technische Details DZT5551Q-13 Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-223-3, Qualification: AEC-Q101, Grade: Automotive, Power - Max: 2 W, Voltage - Collector Emitter Breakdown (Max): 160 V, Current - Collector (Ic) (Max): 600 mA, Supplier Device Package: SOT-223-3, Frequency - Transition: 300MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Current - Collector Cutoff (Max): 50µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote DZT5551Q-13 nach Preis ab 0.25 EUR bis 1.18 EUR
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DZT5551Q-13 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Hi Voltage Transistor |
auf Bestellung 1110 Stücke: Lieferzeit 10-14 Tag (e) |
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DZT5551Q-13 | Diodes Incorporated |
Description: TRANS NPN 160V 0.6A SOT-223-3 Qualification: AEC-Q101 Grade: Automotive Power - Max: 2 W Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: SOT-223-3 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 50µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 3116 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DZT5551Q-13 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor
Bipolar Transistors - BJT Pwr Hi Voltage Transistor
auf Bestellung 1110 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.18 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| 2500+ | 0.28 EUR |
| 5000+ | 0.25 EUR |
| DZT5551Q-13 |
|
Hersteller: Diodes Incorporated
Description: TRANS NPN 160V 0.6A SOT-223-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: TRANS NPN 160V 0.6A SOT-223-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SOT-223-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 50µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 3116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.18 EUR |
| 25+ | 0.73 EUR |
| 100+ | 0.47 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |