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E3M0045065K

E3M0045065K Wolfspeed, Inc.

Wolfspeed_E3M0045065K_Data_Sheet.pdf Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 45M, 650V, TO-247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 4.84mA
Supplier Device Package: TO-247-4L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.11 EUR
30+21.47 EUR
120+19.36 EUR
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Technische Details E3M0045065K Wolfspeed, Inc.

Description: SIC, MOSFET, 45M, 650V, TO-247-4, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 4.84mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1593 pF @ 400 V, Qualification: AEC-Q101.

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E3M0045065K E3M0045065K Hersteller : Wolfspeed Wolfspeed_E3M0045065K_Data_Sheet.pdf MOSFET SiC, MOSFET, 45mohm, 650V, TO-247-4, Automotive, Gen 3
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