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E3M0075120J2-TR

E3M0075120J2-TR Wolfspeed

Wolfspeed_E3M0075120J2_data_sheet.pdf Hersteller: Wolfspeed
SiC MOSFETs SiC, MOSFET, 75mohm, 1200V, TO-263-7 XL T&R, Automotive, Gen3
auf Bestellung 1053 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.16 EUR
10+21.21 EUR
100+16.95 EUR
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Technische Details E3M0075120J2-TR Wolfspeed

Description: 75m, 1200V SiC FET, TO-263-7 XL, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V, Power Dissipation (Max): 172W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 5mA, Supplier Device Package: TO-263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V, Qualification: AEC-Q101.

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E3M0075120J2-TR E3M0075120J2-TR Hersteller : Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.16 EUR
10+20.74 EUR
100+16.00 EUR
Im Einkaufswagen  Stück im Wert von  UAH
E3M0075120J2-TR E3M0075120J2-TR Hersteller : Wolfspeed, Inc. Wolfspeed_E3M0075120J2_data_sheet.pdf Description: 75m, 1200V SiC FET, TO-263-7 XL
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 97.5mOhm @ 17.9A, 15V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 5mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
Qualification: AEC-Q101
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Im Einkaufswagen  Stück im Wert von  UAH