| Anzahl | Privatkunde |
|---|---|
| 1+ | 43.84 EUR |
| 10+ | 41.15 EUR |
| 25+ | 40.98 EUR |
| 50+ | 36.34 EUR |
| 100+ | 34.08 EUR |
| 250+ | 33.45 EUR |
| 500+ | 29.24 EUR |
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Technische Details E4D20120G Wolfspeed
Description: DIODE SIL CARB 1200V 56A TO2632, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1474pF @ 0V, 1MHz, Current - Average Rectified (Io): 56A, Supplier Device Package: TO-263-2, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 200 µA @ 1200 V.
Weitere Produktangebote E4D20120G nach Preis ab 25.94 EUR bis 45.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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E4D20120G | Wolfspeed, Inc. |
 Description: DIODE SIL CARB 1200V 56A TO2632Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1474pF @ 0V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 1200 V |
auf Bestellung 2237 Stücke: Lieferzeit 10-14 Tag (e) |
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| E4D20120G |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Description: DIODE SIL CARB 1200V 56A TO2632
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 2237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.74 EUR |
| 50+ | 27.75 EUR |
| 100+ | 26.03 EUR |
| 500+ | 25.94 EUR |