E4M0045075K1 Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 18.34 EUR |
| 10+ | 12.78 EUR |
| 120+ | 10.95 EUR |
| 510+ | 10.47 EUR |
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Technische Details E4M0045075K1 Wolfspeed
Description: MOSFETS AUTOMOTIVE 139W 3.8V NC, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 3.8V @ 4.84mA, Power Dissipation (Max): 139W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Bulk, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +19V, -8V.
Weitere Produktangebote E4M0045075K1 nach Preis ab 11 EUR bis 21.16 EUR
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E4M0045075K1 | Wolfspeed, Inc. |
 Description: MOSFETS AUTOMOTIVE 139W 3.8V NCDrive Voltage (Max Rds On, Min Rds On): 15V Grade: Automotive Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 3.8V @ 4.84mA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +19V, -8V |
auf Bestellung 198 Stücke: Lieferzeit 10-14 Tag (e) |
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| E4M0045075K1 |
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Hersteller: Wolfspeed, Inc.
Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Description: MOSFETS AUTOMOTIVE 139W 3.8V NC
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-4L
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-4
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.16 EUR |
| 30+ | 12.82 EUR |
| 120+ | 11 EUR |