E6D20065A Wolfspeed
Hersteller: Wolfspeed
Schottky Diodes & Rectifiers SiC, Schottky Diode, 20A, 650V, TO-220-2, Automotive, Gen6
| Anzahl | Preis |
|---|---|
| 1+ | 12.58 EUR |
| 10+ | 10.79 EUR |
| 100+ | 8.99 EUR |
| 250+ | 8.61 EUR |
| 500+ | 7.92 EUR |
| 1000+ | 7.13 EUR |
| 2500+ | 6.81 EUR |
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Technische Details E6D20065A Wolfspeed
Description: DIODE SIL CARBIDE 650V 68A TO220, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 75 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220-2, Current - Average Rectified (Io): 68A, Capacitance @ Vr, F: 1277pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Bulk.
Weitere Produktangebote E6D20065A nach Preis ab 6.29 EUR bis 14.64 EUR
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E6D20065A | Wolfspeed, Inc. |
Description: DIODE SIL CARBIDE 650V 68A TO220 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 75 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 68A Capacitance @ Vr, F: 1277pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Bulk |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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| E6D20065A |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARBIDE 650V 68A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
Description: DIODE SIL CARBIDE 650V 68A TO220
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Bulk
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.64 EUR |
| 50+ | 8.04 EUR |
| 100+ | 7.4 EUR |
| 500+ | 6.29 EUR |