
E6D40065H Wolfspeed, Inc.

Description: DIODE SIL CARB 650V 109A TO2472
Packaging: Bulk
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2460pF @ 0V, 1MHz
Current - Average Rectified (Io): 109A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A
Current - Reverse Leakage @ Vr: 150 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 26.8 EUR |
30+ | 16.54 EUR |
120+ | 14.29 EUR |
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Technische Details E6D40065H Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 109A TO2472, Packaging: Bulk, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 2460pF @ 0V, 1MHz, Current - Average Rectified (Io): 109A, Supplier Device Package: TO-247-2, Operating Temperature - Junction: -55°C ~ 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 40 A, Current - Reverse Leakage @ Vr: 150 µA @ 650 V, Qualification: AEC-Q101.