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ECH8308-TL-H

ECH8308-TL-H onsemi


ech8308-d.pdf Hersteller: onsemi
Description: MOSFET P-CH 12V 10A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 6 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.82 EUR
Mindestbestellmenge: 3000
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Technische Details ECH8308-TL-H onsemi

Description: MOSFET P-CH 12V 10A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: 8-ECH, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 6 V.

Weitere Produktangebote ECH8308-TL-H nach Preis ab 0.92 EUR bis 2.16 EUR

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Preis ohne MwSt
ECH8308-TL-H ECH8308-TL-H Hersteller : onsemi ech8308-d.pdf Description: MOSFET P-CH 12V 10A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 6 V
auf Bestellung 3015 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
14+ 1.87 EUR
100+ 1.29 EUR
500+ 1.08 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 13
ECH8308-TL-H ECH8308-TL-H Hersteller : ON Semiconductor ECH8308-D-1803560.pdf MOSFET SWITCHING DEVICE
auf Bestellung 4079 Stücke:
Lieferzeit 14-28 Tag (e)
ECH8308-TL-H Hersteller : ON Semiconductor 1011ech8308-d.pdf Trans MOSFET P-CH Si 12V 10A 8-Pin ECH T/R
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