ECH8308-TL-H onsemi
Hersteller: onsemiDescription: MOSFET P-CH 12V 10A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 6 V
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.01 EUR |
| 14+ | 1.27 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.59 EUR |
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Technische Details ECH8308-TL-H onsemi
Description: MOSFET P-CH 12V 10A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: 8-ECH, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 6 V.
Weitere Produktangebote ECH8308-TL-H nach Preis ab 0.54 EUR bis 2.06 EUR
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ECH8308-TL-H | Hersteller : onsemi |
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auf Bestellung 1520 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 4079 Stücke: Lieferzeit 10-14 Tag (e) |
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ECH8308-TL-H | Hersteller : ONSEMI |
Description: ONSEMI - ECH8308-TL-H - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (23-Jan-2024) |
auf Bestellung 228001 Stücke: Lieferzeit 14-21 Tag (e) |
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| ECH8308-TL-H | Hersteller : ON Semiconductor |
Trans MOSFET P-CH Si 12V 10A 8-Pin ECH T/R |
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ECH8308-TL-H | Hersteller : onsemi |
Description: MOSFET P-CH 12V 10A 8ECHPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 6 V |
Produkt ist nicht verfügbar |
