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ECH8309-TL-H

ECH8309-TL-H ON Semiconductor


ECH8309-D-1803772.pdf Hersteller: ON Semiconductor
MOSFET SWITCHING DEVICE
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Technische Details ECH8309-TL-H ON Semiconductor

Description: MOSFET P-CH 12V 9.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-ECH, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V.

Weitere Produktangebote ECH8309-TL-H nach Preis ab 0.62 EUR bis 0.62 EUR

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ECH8309-TL-H Hersteller : onsemi ECH8309-D.PDF Description: P-CHANNEL POWER MOSFET -12V, -9.
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
auf Bestellung 142845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
754+0.62 EUR
Mindestbestellmenge: 754
Im Einkaufswagen  Stück im Wert von  UAH
ECH8309-TL-H ECH8309-TL-H Hersteller : onsemi ech8309-d.pdf Description: MOSFET P-CH 12V 9.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ECH8309-TL-H ECH8309-TL-H Hersteller : onsemi ech8309-d.pdf Description: MOSFET P-CH 12V 9.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH