ECH8315-TL-W ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - ECH8315-TL-W - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details ECH8315-TL-W ONSEMI
Description: MOSFET P-CH 30V 7.5A SOT28FL, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: SOT-28FL/ECH8, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote ECH8315-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
ECH8315-TL-W | onsemi |
Description: MOSFET P-CH 30V 7.5A SOT28FL Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Part Status: Obsolete Supplier Device Package: SOT-28FL/ECH8 Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ECH8315-TL-W |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 7.5A SOT28FL
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-28FL/ECH8
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 7.5A SOT28FL
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-28FL/ECH8
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH