Technische Details ECH8410-TL-H ON Semiconductor
Description: MOSFET N-CH 30V 12A SOT28FL/ECH8, Packaging: Bulk, Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 6A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2.6V @ 1mA, Supplier Device Package: SOT-28FL/ECH8, Part Status: Obsolete, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V.
Weitere Produktangebote ECH8410-TL-H nach Preis ab 0.58 EUR bis 0.58 EUR
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ECH8410-TL-H | Hersteller : ONSEMI |
 Description: ONSEMI - ECH8410-TL-H - ECH8410-TL-H, SINGLE MOSFETStariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 2985 Stücke: Lieferzeit 14-21 Tag (e) |
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| ECH8410-TL-H | Hersteller : Sanyo |
Description: MOSFET N-CH 30V 12A SOT28FL/ECH8 Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 6A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-28FL/ECH8 Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 10 V |
auf Bestellung 7894 Stücke: Lieferzeit 10-14 Tag (e) |
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