auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 1.06 EUR |
| 100+ | 0.81 EUR |
| 500+ | 0.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details ECH8657-TL-H onsemi
Description: MOSFET 2N-CH 35V 4.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 35V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V, Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH.
Weitere Produktangebote ECH8657-TL-H nach Preis ab 0.44 EUR bis 1.53 EUR
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ECH8657-TL-H | Hersteller : onsemi |
 Description: MOSFET 2N-CH 35V 4.5A 8ECHPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
auf Bestellung 1798 Stücke: Lieferzeit 10-14 Tag (e) |
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ECH8657-TL-H | Hersteller : ONSEMI |
Description: ONSEMI - ECH8657-TL-H - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (23-Jan-2024) |
auf Bestellung 78250 Stücke: Lieferzeit 14-21 Tag (e) |
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| ECH8657-TL-H | Hersteller : ONSEMI |
ECH8657-TL-H Multi channel transistors |
Produkt ist nicht verfügbar |
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ECH8657-TL-H | Hersteller : onsemi |
Description: MOSFET 2N-CH 35V 4.5A 8ECH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 35V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 20V Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
Produkt ist nicht verfügbar |