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ECH8660-TL-H

ECH8660-TL-H onsemi


ECH8660_D-1803290.pdf Hersteller: onsemi
MOSFET SWITCHING DEVICE
auf Bestellung 3635 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.14 EUR
10+0.92 EUR
100+0.75 EUR
250+0.73 EUR
Mindestbestellmenge: 3
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Technische Details ECH8660-TL-H onsemi

Description: MOSFET N/P-CH 30V 4.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V, Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH, Part Status: Active.

Weitere Produktangebote ECH8660-TL-H nach Preis ab 0.48 EUR bis 1.67 EUR

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ECH8660-TL-H ECH8660-TL-H Hersteller : onsemi ech8660-d.pdf Description: MOSFET N/P-CH 30V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 1014 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
ECH8660-TL-H Hersteller : ONSEMI ech8660-d.pdf ECH8660-TL-H Multi channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ECH8660-TL-H ECH8660-TL-H Hersteller : onsemi ech8660-d.pdf Description: MOSFET N/P-CH 30V 4.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH