Produkte > ONSEMI > ECH8660-TL-H
ECH8660-TL-H

ECH8660-TL-H onsemi


ech8660-d.pdf Hersteller: onsemi
Description: MOSFET N/P-CH 30V 4.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 1088 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
17+1.59 EUR
20+ 1.37 EUR
100+ 0.95 EUR
500+ 0.79 EUR
1000+ 0.67 EUR
Mindestbestellmenge: 17
Produktrezensionen
Produktbewertung abgeben

Technische Details ECH8660-TL-H onsemi

Description: MOSFET N/P-CH 30V 4.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V, Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH, Part Status: Active.

Weitere Produktangebote ECH8660-TL-H nach Preis ab 1.07 EUR bis 1.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
ECH8660-TL-H ECH8660-TL-H Hersteller : onsemi ECH8660_D-1803290.pdf MOSFET SWITCHING DEVICE
auf Bestellung 3635 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
31+1.69 EUR
39+ 1.36 EUR
100+ 1.11 EUR
250+ 1.07 EUR
Mindestbestellmenge: 31
ECH8660-TL-H ECH8660-TL-H Hersteller : onsemi ech8660-d.pdf Description: MOSFET N/P-CH 30V 4.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 240pF @ 10V
Rds On (Max) @ Id, Vgs: 59mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Part Status: Active
Produkt ist nicht verfügbar