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ECH8690-TL-H

ECH8690-TL-H onsemi


ech8690-d.pdf
Hersteller: onsemi
Description: MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, 790pF @ 20V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 51000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.51 EUR
6000+0.48 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ECH8690-TL-H onsemi

Description: MOSFET N/P-CH 60V 4.7A/3.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A, Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, 790pF @ 20V, Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, 4V Drive, Supplier Device Package: 8-ECH, Part Status: Active.

Weitere Produktangebote ECH8690-TL-H nach Preis ab 0.52 EUR bis 2.15 EUR

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ECH8690-TL-H ECH8690-TL-H onsemi ECH8690-D.PDF MOSFETs PCH+NCH 4V DRIVE SERIES
auf Bestellung 16968 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.01 EUR
10+1.07 EUR
100+0.73 EUR
500+0.62 EUR
1000+0.58 EUR
3000+0.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ECH8690-TL-H ECH8690-TL-H onsemi ech8690-d.pdf Description: MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, 790pF @ 20V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 53206 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
ECH8690-TL-H ECH8690-D.PDF
ECH8690-TL-H
Hersteller: onsemi
MOSFETs PCH+NCH 4V DRIVE SERIES
auf Bestellung 16968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.01 EUR
10+1.07 EUR
100+0.73 EUR
500+0.62 EUR
1000+0.58 EUR
3000+0.52 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
ECH8690-TL-H ech8690-d.pdf
ECH8690-TL-H
Hersteller: onsemi
Description: MOSFET N/P-CH 60V 4.7A/3.5A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V, 790pF @ 20V
Rds On (Max) @ Id, Vgs: 55mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate, 4V Drive
Supplier Device Package: 8-ECH
Part Status: Active
auf Bestellung 53206 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
14+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.63 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH