Produkte > ONSEMI > EFC2K102ANUZTDG
EFC2K102ANUZTDG

EFC2K102ANUZTDG onsemi

efc2k102anuz-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
auf Bestellung 4748 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
16+1.1 EUR
25+1.03 EUR
100+0.78 EUR
250+0.67 EUR
500+0.63 EUR
1000+0.48 EUR
2500+0.45 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details EFC2K102ANUZTDG onsemi

Description: MOSFET 2N-CH 12V 33A 10WLCSP, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 33A (Ta), Rds On (Max) @ Id, Vgs: 2.75mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 10-WLCSP (2.98x1.49).

Weitere Produktangebote EFC2K102ANUZTDG

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
EFC2K102ANUZTDG Hersteller : ON Semiconductor efc2k102anuz-d.pdf Power MOSFET, Dual, N-Channel, for 1-Cell Lithium-ion Battery Protection
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EFC2K102ANUZTDG EFC2K102ANUZTDG Hersteller : onsemi efc2k102anuz-d.pdf Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.75mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH