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EFC3J018NUZTDG

EFC3J018NUZTDG onsemi

efc3j018nuz-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.67 EUR
10000+0.64 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EFC3J018NUZTDG onsemi

Description: MOSFET 2N-CH 20V 23A 6WLCSP, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2.5W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-XFBGA, WLCSP, Packaging: Tape & Reel (TR), Supplier Device Package: 6-WLCSP (1.77x3.05), Vgs(th) (Max) @ Id: 1.3V @ 1mA.

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EFC3J018NUZTDG EFC3J018NUZTDG onsemi efc3j018nuz-d.pdf MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
auf Bestellung 52067 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.57 EUR
10+1.64 EUR
100+1.09 EUR
500+0.85 EUR
1000+0.72 EUR
2500+0.71 EUR
5000+0.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
EFC3J018NUZTDG EFC3J018NUZTDG onsemi efc3j018nuz-d.pdf Description: MOSFET 2N-CH 20V 23A 6WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 19698 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
11+1.69 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.73 EUR
2000+0.72 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
EFC3J018NUZTDG efc3j018nuz-d.pdf
EFC3J018NUZTDG
Hersteller: onsemi
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
auf Bestellung 52067 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.57 EUR
10+1.64 EUR
100+1.09 EUR
500+0.85 EUR
1000+0.72 EUR
2500+0.71 EUR
5000+0.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
EFC3J018NUZTDG efc3j018nuz-d.pdf
EFC3J018NUZTDG
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 19698 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
11+1.69 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.73 EUR
2000+0.72 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH