EFC3J018NUZTDG onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 6-WLCSP (1.77x3.05)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.86 EUR |
| 10000+ | 0.8 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5000 Stücke
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Produktbewertung abgeben
Technische Details EFC3J018NUZTDG onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 6-WLCSP (1.77x3.05).
Weitere Produktangebote EFC3J018NUZTDG nach Preis ab 0.88 EUR bis 3.45 EUR
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EFC3J018NUZTDG | onsemi |
Description: MOSFET 2N-CH 20V 23A 6WLCSP Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 6-WLCSP (1.77x3.05) |
auf Bestellung 39905 Stücke: Lieferzeit 10-14 Tag (e) |
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EFC3J018NUZTDG | onsemi |
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN |
auf Bestellung 97164 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EFC3J018NUZTDG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 6-WLCSP (1.77x3.05)
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 6-WLCSP (1.77x3.05)
auf Bestellung 39905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.12 EUR |
| 50+ | 1.59 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.12 EUR |
| EFC3J018NUZTDG |
|
Hersteller: onsemi
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
auf Bestellung 97164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.45 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1 EUR |
| 2500+ | 0.92 EUR |
| 5000+ | 0.88 EUR |