EFC3J018NUZTDG onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
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Technische Details EFC3J018NUZTDG onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V, Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 2.5W (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 6-XFBGA, WLCSP, Packaging: Tape & Reel (TR), Supplier Device Package: 6-WLCSP (1.77x3.05), Vgs(th) (Max) @ Id: 1.3V @ 1mA.
Weitere Produktangebote EFC3J018NUZTDG nach Preis ab 0.79 EUR bis 3.19 EUR
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EFC3J018NUZTDG | onsemi |
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN |
auf Bestellung 52067 Stücke: Lieferzeit 10-14 Tag (e) |
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EFC3J018NUZTDG | onsemi |
Description: MOSFET 2N-CH 20V 23A 6WLCSP Supplier Device Package: 6-WLCSP (1.77x3.05) Vgs(th) (Max) @ Id: 1.3V @ 1mA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 23A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 2.5W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 19698 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EFC3J018NUZTDG |
|
Hersteller: onsemi
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
auf Bestellung 52067 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.86 EUR |
| 2500+ | 0.84 EUR |
| 5000+ | 0.79 EUR |
| EFC3J018NUZTDG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 23A 6WLCSP
Supplier Device Package: 6-WLCSP (1.77x3.05)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 19698 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.19 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.87 EUR |
| 2000+ | 0.86 EUR |