EFC4630R-TR ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - EFC4630R-TR - POWER FIELD-EFFECT TRANSISTOR
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.49 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
1500 Stücke
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Technische Details EFC4630R-TR ONSEMI
Description: MOSFET 2N-CH 24V 6A EFCP, Packaging: Bulk, Package / Case: 4-XFBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: EFCP1313-4CC-037.
Weitere Produktangebote EFC4630R-TR nach Preis ab 0.5 EUR bis 0.5 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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EFC4630R-TR | onsemi |
Description: MOSFET 2N-CH 24V 6A EFCP Packaging: Bulk Package / Case: 4-XFBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: EFCP1313-4CC-037 |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EFC4630R-TR |
Hersteller: onsemi
Description: MOSFET 2N-CH 24V 6A EFCP
Packaging: Bulk
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1313-4CC-037
Description: MOSFET 2N-CH 24V 6A EFCP
Packaging: Bulk
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: EFCP1313-4CC-037
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1069+ | 0.5 EUR |