EFC4630R-TR onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 24V 6A EFCP
Supplier Device Package: EFCP1313-4CC-037
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 1069+ | 0.42 EUR |
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Technische Details EFC4630R-TR onsemi
Description: MOSFET 2N-CH 24V 6A EFCP, Supplier Device Package: EFCP1313-4CC-037, Vgs(th) (Max) @ Id: 1.3V @ 1mA, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Drain to Source Voltage (Vdss): 24V, Power - Max: 1.6W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 4-XFBGA, Packaging: Bulk.
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EFC4630R-TR | onsemi |
Description: MOSFET 2N-CH 24V 6A EFCP Supplier Device Package: EFCP1313-4CC-037 Vgs(th) (Max) @ Id: 1.3V @ 1mA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Drain to Source Voltage (Vdss): 24V Power - Max: 1.6W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 4-XFBGA Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| EFC4630R-TR |
Hersteller: onsemi
Description: MOSFET 2N-CH 24V 6A EFCP
Supplier Device Package: EFCP1313-4CC-037
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Bulk
Description: MOSFET 2N-CH 24V 6A EFCP
Supplier Device Package: EFCP1313-4CC-037
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH