| Anzahl | Preis |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 1.13 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.57 EUR |
| 5000+ | 0.55 EUR |
| 10000+ | 0.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EFC4K105NUZTDG onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP, Packaging: Tape & Reel (TR), Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), Drain to Source Voltage (Vdss): 22V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 10-WLCSP (3.4x1.96).
Weitere Produktangebote EFC4K105NUZTDG nach Preis ab 0.57 EUR bis 1.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
EFC4K105NUZTDG | onsemi |
 Description: MOSFET 2N-CH 22V 25A 10WLCSPPackaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (3.4x1.96) |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EFC4K105NUZTDG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.6 EUR |
| 2000+ | 0.57 EUR |