EGF1B-1HE3/67A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details EGF1B-1HE3/67A Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 1A DO214BA, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Grade: Automotive, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214BA (GF1), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214BA, Packaging: Tape & Reel (TR).